raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 1 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information parameter min typ max unit frequency range 37 40 ghz gate supply voltage 1 (vg) -0.5 v gain small signal at pin= -10 dbm 18 22 db gain variation vs frequency 4 db gain at 1 db compression 21 db power output at 1 db compression 22 dbm power output saturated: pin=+5 dbm 21 23.5 dbm drain current at pin=-10 dbm 250 ma drain current at 1db compression 280 ma parameter min typ max unit drain current at saturated: pin=+5 dbm 270 ma power added efficiency (pae): at p1db 15 % input return loss (pin=-10 dbm) 12 db output return loss (pin=-10 dbm) 7 db oip3 30 dbm noise figure 6 db detector voltage (pout= +15 dbm) 0.15 v (bias current = 0.02-0.05 ma) parameter symbol value unit positive dc voltage (+4v typical) vd +6 volts simultaneous (vd - vg) vdg 8 volts positive dc current i d 483 ma rf input power (from 50 ? source) p in +8 dbm operating baseplate temperature t c -30 to +85 c storage temperature range t stg -55 to +125 c thermal resistance r jc 46 c/w (channel to backside) the RMWP38001 is a 4-stage gaas mmic amplifier designed as a 37 to 40 ghz power amplifier for use in point to point radios, point to multi-point communications, lmds, and other millimeter wave applications. in conjunction with other raytheon amplifiers, multipliers and mixers it forms part of a complete 38 ghz transmit/receive chipset. the RMWP38001 utilizes raytheons 0.25m power phemt process and is sufficiently versatile to serve in a variety of power amplifier applications. absolute maximum ratings description 4 mil substrate small-signal gain 22 db (typ.) 1db compressed pout 22 dbm (typ.) chip size 3.4 mm x 1.4 mm features note: 1. typical range of gate voltage is -2.0 to 0 v to set idq of 250 ma. electrical characteristics (at 25c), 50 ? system, vd=+4 v, quiescent current idq=250 ma RMWP38001 37-40 ghz power amplifier mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 2 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325c for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf and dc ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012 long corresponding to a typically 2 mil between the chip and the substrate material. application information figure 1 functional block diagram drain supply vd1 drain supply vd2 mmic chip rf out rf in gate supply vg ground (back of chip) drain supply vd3 drain supply vd4 reference detector voltage vref (not connected to circuit) output power detector voltage vdet note: for output power level detection, bias both detector and reference diodes. dc voltage difference between detector and reference can be used to measure output power after calibration. if output power level detection is not desired, do not make connection to detector bond pad. dimensions in mm 0.0 1.4 0.8355 0.686 0.5365 0.0 0.0 0.0 3.4 3.4 1.4 0.545 1.05 1.55 3.0375 0.376 0.8315 0.682 0.5325 figure 2 chip layout and bond pad locations chip size is 3.4 mm x 1.4 mm. back of chip is rf and dc ground RMWP38001 37-40 ghz power amplifier mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 3 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information notes: 1. use 0.003 by 0.0005 gold ribbon for bonding. rf input and output bonds should be less than 0.015 long with stress relief . 2. if output power level detection is not desired, do not make connection to detector bond pad. 50 k ohms 10,000pf 100pf rf input rf output 5mil thick alumina 50-ohm 5 mil thick alumina 50-ohm 2 mil gap l< 0.015 (2 places) die-attach 80au/20sn 100pf vg (negative) 100pf 100pf 10,000pf vd (positive) detector voltage vdet reference detector bias voltage vrefbias 50 k ohms detector bias voltage vdetbias reference detector voltage vref note: for output power level detection, bias both detector and reference diodes. dc voltage difference between detector and reference can be used to measure output power after calibration. if output power level detection is not desired, do not make connection to detector bond pad. figure 3 recommended application schematic circuit diagram figure 4 recommended assembly diagram RMWP38001 37-40 ghz power amplifier mmic gate supply vg drain supply vd=+4 v ground (back of chip) 100pf l 100pf 10,000pf l l l l = bond wire inductance mmic chip rf out rf in 100pf l l 100pf l l 100pf l l 10,000pf reference detector voltage vref r = 50 k ohms r = 50kohms detector bias voltage vdetbias (typ. -2.5 v) reference detector bias voltage vrefbias (typ. -2.5 v) detector voltage vdet l
raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 4 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information step 1: turn off rf input power. step 2: connect the dc supply grounds to the grounds of the chip carrier. slowly apply negative gate bias supply voltage of -1.5 v to vg. step 3: slowly apply positive drain bias supply voltage of +4 v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq=250 ma. step 5: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg). caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence of steps must be followed to properly test the amplifier: recommended procedure for biasing and operation performance data RMWP38001, 38 ghz power amplifier typical on-wafer measurements i dq = 250 ma v dd = 4 v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 35 35.5 36 36.5 37 37.5 38 38.5 39 39.5 40 frequency (ghz) s21 mag (db) -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 s 11 and s 22 mag (db) s 21 s 22 s 11 RMWP38001 37-40 ghz power amplifier mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 5 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information RMWP38001 typical on-wafer output power at 1 db gain compression measurements at i dq = 290 ma v dd = 4.0 performance data RMWP38001 38 ghz power amplifier. typical output ip 3 performance in 50 ohm test fixture. i dq = 290 ma, v dd = 4v. tone spacing = 1 mhz 0 5 10 15 20 25 30 35 40 45 50 36.5 37 37.5 38 38.5 39 39.5 40 40.5 upper product frequency (ghz) output ip3 (dbm) pout = 10 dbm/tone 0 5 10 15 20 25 30 37 37.5 38 38.5 39 39.5 40 frequency (ghz) output power at 1 db gain compression (dbm) RMWP38001 37-40 ghz power amplifier mmic
raytheon rf components 362 lowell street andover, ma 01810 revised march 14, 2001 page 6 www.raytheon.com/micro characteristic performance data and specifications are subject to change without notice. product information d&l technical sales 6139 s. rural road, #102 tempe, az 85283 480-730-9553 fax: 480-730-9647 nicholas delvecchio, jr. dlarizona@aol.com hi-peak technical sales p.o. box 6067 amherst, nh 03031 866-230-5453 fax: 603-672-9228 sales@hiCpeak.com north america spartech south 2115 palm bay road, ne, suite 4 palm bay, fl 32904 321-727-8045 fax: 321-727-8086 jim morris jim@spartech-south.com teq sales, inc. 920 davis road, suite 304 elgin, il 60123 847-742-3767 fax: 847-742-3947 dennis culpepper dculpepper@teqsales.com cantec representatives 8 strathearn ave, no. 18 brampton, ontario canada l6t 4l9 905-791-5922 fax: 905-791-7940 dave batten cantec-ott@cantec-o.net sangus oy lunkintie 21, 90460 oulunsalo finland 358-8-8251-100 fax: 358-8-8251-110 juha virtala juha.virtala@sangus.fi itx corporation 2C5, kasumigaseki 3Cchome chiyodaCku tokyo 100-6014 japan 81-3-4288-7073 fax: 81-3-4288-7243 maekawa ryosuke maekawa.ryosuke@ itxCcorp.co.jp mti engineering ltd. afek industrial park hamelacha 11 new industrial area rosh hayin 48091 israel 972-3-902-5555 fax: 972-3-902-5556 adi peleg adi_p@mti-group.co.il sirces srl via c. boncompagni, 3b 20139 milano italy 3902-57404785 fax: 3902-57409243 nicola iacovino nicola.iacovino@sirces.it sea union 9f-1, building a, no 19-3 san-chung road nankang software park taiwan, roc taipei 115 02-2655-3989 fax: 02-2655-3918 murphy su murphy@seaunionweb.com.tw globes elektronik & co . klarastrabe 12 74072 heilbronn germany 49-7131-7810-0 fax: 49-7131-7810-20 ulrich blievernicht hfwelt@globes.de headquarters 6321 san ignacio drive san jose, ca 95119 408-360-4073 fax: 408-281-8802 art herbig art.herbig@avnet.com belgium and luxembourg cipalstraat 2440 geel belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com united states (east coast) raytheon 362 lowell street andover, ma 01810 978-684-8628 fax: 978-684-8646 walter shelmet wshelmet@ rrfc.raytheon.com sales office headquarters 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com customer support europe raytheon am teckenberg 53 40883 ratingen germany 49-2102-706-155 fax: 49-2102-706-156 peter hales peter_j_hales@ raytheon.com asia raytheon room 601, gook je ctr. bldg 191 hangang ro 2-ga yongsan-gu, seoul, korea 140-702 82-2-796-5797 fax: 82-2-796-5790 t.g. lee tg_lee@ rrfc.raytheon.com united states (west coast) raytheon 362 lowell street andover, ma 01810 978-684-8919 fax: 978-684-8646 rob sinclair robert_w_sinclair@ rrfc.raytheon.com united kingdom burnt ash road aylesford, kent england me207xb 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com france 4 allee du cantal evry, cedex france 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com holland chr. huygensweg 17 2400 aj alphen aan den rijn the netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com spain c/isobel colbrand, 6 C 4a 28050 madrid spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com europe asia steward technology 6990 village pkwy #206 dublin, ca 94568 925-833-7978 fax: 925-560-6522 john steward johnsteward1@msn.com sangus ab berghamnvagen 68 box 5004 sC165 10 hasselby sweden ronny gustafson 468-0-380210 fax: 468-0-3720954 worldwide distribution worldwide sales representatives
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